| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent meltdown of an electrode pad and enhance an allowable current value of a current pad without increase in a thickness or an area of the electrode pad of a semiconductor chip. <P>SOLUTION: In at least one electrode pad 21s, 21d of a semiconductor chip 20, a first wire 41 is bonded on a single electrode pad 21 at a plurality of points 45. Further, a second wire 42 is bonded on the first wire 41 at a plurality of points 46 along the first wire 41. In some embodiments, a top shape of the first wire 41 on the electrode pad 21 may be processed prior to the bonding of the second wire 42. <P>COPYRIGHT: (C)2012,JPO&INPIT |
