| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce occurrence of deposition on the lower surface at the peripheral part of a processed substrate when a processed substrate such as a semiconductor wafer is subjected to plasma treatment. <P>SOLUTION: When a processed substrate W is mounted on a mounting table 11 disposed in a processing chamber 10, and processed by generating plasma in the processing chamber 10 by applying a high frequency voltage, an electric field for accelerating ions generated by the plasma toward the lower surface at the peripheral part of the processed substrate W is formed under the peripheral part of the processed substrate W mounted on the mounting table 11. The ions collide against the lower surface at the peripheral part of the processed substrate W, thus reducing occurrence of deposition. <P>COPYRIGHT: (C)2012,JPO&INPIT |
