| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus for using a high pulse frequency of a waveform of an envelope in power, transmitting low frequency power to an electrode of a process chamber at high power, suppressing abnormal discharge, and forming a film at the same speed as a conventional case. <P>SOLUTION: A plasma generating device comprises: a plurality of AC power supply outputting separately power of different fundamental frequencies; a plurality of matching circuits arranged in output of each of the AC power supply; counter electrodes of a plasma reactor where two electrodes are oppositely installed; and a plurality of band pass filters which are installed between one electrode in each of the counter electrodes and the matching circuits and in which the fundamental frequency of the corresponding AC power supply is set to be a center frequency of a pass band. <P>COPYRIGHT: (C)2012,JPO&INPIT |
