| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a slicing method of a semiconductor material for slicing a silicon wafer 2S having a predetermined thickness t from a silicon ingot 2 without being affected by internal crystal orientation. <P>SOLUTION: In a slicing method of a semiconductor materia, first of all, a circumferential direction groove 2D is formed on an outer peripheral surface 2B of a silicon ingot 2 by a scriber 4A. Next, a first laser beam L1 and a second laser beam L2 are superposed to be irradiated onto the circumferential direction groove 2D from an end surface 2A side. Thereafter, both laser beams L1 and L2 are moved relatively on a spiral moving trajectory along a plane-to-be-sliced 2E. Thereby, the plane-to-be-sliced 2E and a part adjacent to it are modified into a modified region 2F without having crystal orientation by the first laser beam L1, and the second laser beam L2 is irradiated onto the modified region 2F. Thereby, a crack 20 generated in the circumferential direction groove 2D propagates in a radial direction to slice a silicon wafer 2S. <P>COPYRIGHT: (C)2012,JPO&INPIT |
