| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing a short circuit between a gate electrode and a cathode electrode, capable of increasing gate current, and capable of enlarging the area of a channel region, when the semiconductor device is adapted to, for example, an SIThy. <P>SOLUTION: A plurality of lands 20 and a plurality of grooves 22 are formed on a primary surface of a semiconductor substrate 12. Cathode regions 24 are formed on surface portions of the lands 20, and gate regions 26 are formed at the bottoms of the grooves 22. Gate electrodes 16 are formed in the grooves 22, and cathode electrodes 14 are formed on the top surfaces of the lands 20. Insulating films 28 are formed from the top surfaces of the lands 20 to the bottoms of the grooves 22. Interlayer insulating films 30 are formed so as to cover the side surfaces of the cathode electrodes 14, the gate electrodes 16, and the insulating films 28. A connection electrode 32 is formed so as to cover the top surfaces of the cathode electrodes 14 and the interlayer insulating films 30, so that each of the cathode electrodes 14 is electrically connected one another. Only the insulating films 28 is interposed between the sidewalls of the grooves 22 and the sidewalls of the gate electrodes 16. <P>COPYRIGHT: (C)2012,JPO&INPIT |
