发明名称 |
METHOD OF FORMING RESISTANCE VARIABLE MEMORY DEVICE |
摘要 |
A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film. |
申请公布号 |
US2012142141(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113241315 |
申请日期 |
2011.09.23 |
申请人 |
PARK JEONG-HEE;PARK JUNG-HWAN;HORII HIDEKI;CHO SUNG-LAE |
发明人 |
PARK JEONG-HEE;PARK JUNG-HWAN;HORII HIDEKI;CHO SUNG-LAE |
分类号 |
H01L21/06;H01L21/8246 |
主分类号 |
H01L21/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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