| 发明名称 |
METHOD OF MANUFACTURING HIGH FREQUENCY DEVICE STRUCTURE |
| 摘要 |
Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate. |
| 申请公布号 |
US2012142148(A1) |
申请公布日期 |
2012.06.07 |
| 申请号 |
US201113283626 |
申请日期 |
2011.10.28 |
| 申请人 |
YOON HYUNG SUP;MIN BYOUNG-GUE;AHN HOKYUN;LEE SANG-HEUNG;KIM HAE CHEON;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YOON HYUNG SUP;MIN BYOUNG-GUE;AHN HOKYUN;LEE SANG-HEUNG;KIM HAE CHEON |
| 分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
| 代理机构 |
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