发明名称 ENCAPSULATED SPUTTERING TARGET
摘要 Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
申请公布号 US2012138457(A1) 申请公布日期 2012.06.07
申请号 US201213397184 申请日期 2012.02.15
申请人 HAWRYLCHAK LARA;TANG XIANMIN;PARHKE VIJAY;WANG RONGJUN;APPLIED MATERIALS, INC. 发明人 HAWRYLCHAK LARA;TANG XIANMIN;PARHKE VIJAY;WANG RONGJUN
分类号 C23C14/34 主分类号 C23C14/34
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