| 摘要 |
A semiconductor memory device includes a device isolation pattern defining an active region of a substrate, a buried gate electrode extending longitudinally in a given direction across the active region, a first impurity region and a second impurity region disposed along respective sides of the buried gate electrode, a conductive pad disposed on the substrate and electrically connected to the first impurity region, a first contact plug disposed on the substrate and electrically connected to the second impurity doping region, and a second contact plug disposed on the pad. |
