| 摘要 |
A method of fabricating an (Al, In, Ga)N based optoelectronic device, comprising forming an n-type ohmic contact on an (Al, In, Ga)N surface of the device, wherein the surface comprises an Nitrogen face (N-face) and a N-rich face of the (Al, In, Ga)N, the n-type contact is on the N-face and the N-rich face, and the current spreading of the n-type ohmic contact is enhanced by a combination of a lower and a higher contact resistance on the surface. |
