发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a lithography apparatus which performs drawing in high accuracy while achieving high speed operation by using a GPU. <P>SOLUTION: A lithography apparatus 100 comprises a plurality of GPUs 42, 44 performing the same data processing, a CPU 30 performing the same data processing as that of the plurality of GPUs, a GPU result comparison unit which compares the output results from the plurality of GPUs, a correction unit 126 which calculates the drawing position on a sample by using one of the output results from the plurality of GPUs when the output results from the plurality of GPUs match each other, otherwise by using the output results from the CPU, and a lithography unit 150 which draws a pattern at the drawing position by using an electron beam. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012109484(A) 申请公布日期 2012.06.07
申请号 JP20100258658 申请日期 2010.11.19
申请人 NUFLARE TECHNOLOGY INC 发明人 OKAMOTO YOSHIHIRO;HIGURE HITOSHI;SHINTANI IKUMA;NAKAYAMADA NORIAKI;SAKAI YUSUKE
分类号 H01L21/027 主分类号 H01L21/027
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