发明名称 |
VERTICAL STRUCTURE NON-VOLATILE MEMORY DEVICES INCLUDING IMPURITY PROVIDING LAYER |
摘要 |
A vertical structure non-volatile memory device includes a channel region that vertically extends on a substrate. A memory cell string vertically extends on the substrate along a first wall of the channel regions, and includes at least one selection transistor and at least one memory cell. An impurity providing layer is disposed on a second wall of the channel region and includes impurities.
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申请公布号 |
US2012139027(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113238368 |
申请日期 |
2011.09.21 |
申请人 |
SON BYOUNG-KEUN;LEE CHANG-HYUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SON BYOUNG-KEUN;LEE CHANG-HYUN |
分类号 |
H01L29/78;H01L29/772 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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