A method for manufacturing a quantum dot solar cell according to the present invention comprises the steps of: (a) preparing a substrate; (b) forming a first silicon film in which amorphous silicon and nanocrystal are mixed together on the upper part of the substrate; (c) controlling the size of the nanocrystal formed on the first silicon film; (d) etching the amorphous silicon on the first silicon film; and (e) coating an insulating film on the surface of the nanocrystal remaining on the substrate on which the amorphous silicon is etched.
申请公布号
WO2012074298(A2)
申请公布日期
2012.06.07
申请号
WO2011KR09231
申请日期
2011.11.30
申请人
KOREA BASIC SCIENCE INSTITUTE;YOO, SUKJAE;OH, KYOUNGSUK;LEE, BONGJU;KIM, DEACHUL;KIM, JONGSIK;KIM, YOUNGWOO