Semiconductor device, fabricating method thereof, and semiconductor package comprising the semiconductor device

摘要

PURPOSE: A semiconductor device, a manufacturing method thereof, and a semiconductor package including the same are provided to prevent a semiconductor substrate and a penetrating electrode to be shorted by preventing the damage of a via hole insulating layer when eliminating a first insulating layer of penetrating via. CONSTITUTION: A semiconductor substrate(10) comprises a first side(11) and a second side(12) opposed to the first side. An integrated circuit(13) is formed on the first side of the semiconductor substrate. A via hole(16) is separated from the integrated circuit and is provided within the semiconductor substrate. A penetrating electrode(20) comprises a conductive connection unit(26) and a barrier layer(24). The barrier layer is formed at the inner wall of the via hole. A trench(103) is formed at the second side of the semiconductor substrate. A re-wire(45) is electrically connected with the penetrating electrode.