发明名称 Nano rod light emitting device and method of manufacturing the same
摘要 PURPOSE: A light emitting device and a manufacturing method thereof are provided to control a leakage current which can be generated at the adjacent face with a mask layer by narrowly forming the cross section of a lower predetermined region of a radiation nano-rod as compared with other region. CONSTITUTION: A first semiconductor layer(120) is formed on a substrate(110). A mask layer(130) equipped with a plurality of penetration holes is formed on the first semiconductor layer. A semiconductor nano core(142) is composed of semiconductor material doped by a same first type as the first semiconductor layer. An active layer(146) emits light through electron-hole recombination. The active layer surrounds the surface of the semiconductor nano core. A second semiconductor layer(148) covers the surface of the active layer. The second semiconductor layer is doped by a second type.
申请公布号 KR20120058137(A) 申请公布日期 2012.06.07
申请号 KR20100119786 申请日期 2010.11.29
申请人 SAMSUNG LED CO., LTD. 发明人 CHA, NAM GOO;SEONG, HAN KYU;CHUNG, HUN JAE;SONE, CHEOL SOO
分类号 H01L33/18;H01L33/04 主分类号 H01L33/18
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