发明名称 |
Nano rod light emitting device and method of manufacturing the same |
摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to control a leakage current which can be generated at the adjacent face with a mask layer by narrowly forming the cross section of a lower predetermined region of a radiation nano-rod as compared with other region. CONSTITUTION: A first semiconductor layer(120) is formed on a substrate(110). A mask layer(130) equipped with a plurality of penetration holes is formed on the first semiconductor layer. A semiconductor nano core(142) is composed of semiconductor material doped by a same first type as the first semiconductor layer. An active layer(146) emits light through electron-hole recombination. The active layer surrounds the surface of the semiconductor nano core. A second semiconductor layer(148) covers the surface of the active layer. The second semiconductor layer is doped by a second type. |
申请公布号 |
KR20120058137(A) |
申请公布日期 |
2012.06.07 |
申请号 |
KR20100119786 |
申请日期 |
2010.11.29 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
CHA, NAM GOO;SEONG, HAN KYU;CHUNG, HUN JAE;SONE, CHEOL SOO |
分类号 |
H01L33/18;H01L33/04 |
主分类号 |
H01L33/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|