| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image sensor capable of covering an imaging region with an interlayer insulating film excellent in film thickness accuracy, suppressing sufficiently parasitic capacitance between wiring on the interlayer insulating film and a lower layer at a peripheral circuit region, and thus improving an imaging property. <P>SOLUTION: A solid state image sensor 1a comprises: a plurality of photoelectric conversion parts 13 arranged on a surface layer of a semiconductor substrate 11; an interlayer insulating film 31 to cover a top surface of a semiconductor substrate 11; wiring 35 disposed on the interlayer insulating film 31 at a peripheral part of where the photoelectric conversion parts 13 are arranged; and an insulative pattern 33, made from a layer different from the interlayer insulating film 31 and having the same pattern shape as that of the wiring 35, held between the wiring 35 and the interlayer insulating film 31. <P>COPYRIGHT: (C)2012,JPO&INPIT |
