发明名称 BIAS CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a bias circuit that can protect a receiving transistor against damage from excessive input in a simple configuration without deteriorating receiving noise performance. <P>SOLUTION: A bias circuit used for a receiving amplifier that does not have any excessive input protection circuits includes a gate bias circuit 8 connected to a gate terminal of a receiving transistor 2 constituting the receiving amplifier, and a drain bias circuit 9 connected to a drain terminal of the receiving transistor 2. The gate bias circuit 8 has change detection means for detecting a change in gate current Ig or gate voltage Vg of the receiving transistor 2 at excessive input to generate a change signal. The drain bias circuit 9 reduces drain voltage Vd to the receiving transistor 2 in response to the change signal at excessive input. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012109712(A) 申请公布日期 2012.06.07
申请号 JP20100255736 申请日期 2010.11.16
申请人 MITSUBISHI ELECTRIC CORP 发明人 YAMANAKA KOJI;YAMAUCHI KAZUHISA;KUWATA EIGO;NAKAHARA KAZUHIKO;CHAGI SHIN
分类号 H03F1/52;G01S7/28;H03F1/26;H03F3/193 主分类号 H03F1/52
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