POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER MODULE

摘要

PROBLEM TO BE SOLVED: To solve such a problem of a power semiconductor device switching at high speed that a high voltage is generated to cause dielectric breakdown of a thin insulating film thus destroying the semiconductor device.

SOLUTION: The semiconductor device comprises: a first conductivity type semiconductor substrate; a first conductivity type drift layer formed on the first main surface of the semiconductor substrate; a second conductivity type second well region formed to surround the cell region of the drift layer; a first well contact hole provided to penetrate a gate insulating film on the second well region; a second well contact hole provided to penetrate a field insulating film on the second well region; a source pad electrically connecting the second well regions each other and the source region of the cell region via source contact holes; a drain electrode; and a high impurity concentration well region beneath a part of the surface layer in the second well region and the second well contact hole.

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