发明名称 |
Self-Aligned Contact For Replacement Gate Devices |
摘要 |
A conductive top surface of a replacement gate stack is recessed relative to a top surface of a planarization dielectric layer by at least one etch. A dielectric capping layer is deposited over the planarization dielectric layer and the top surface of the replacement gate stack so that the top surface of a portion of the dielectric capping layer over the replacement gate stack is vertically recessed relative to another portion of the dielectric layer above the planarization dielectric layer. The vertical offset of the dielectric capping layer can be employed in conjunction with selective via etch processes to form a self-aligned contact structure.
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申请公布号 |
US2012139061(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US20100958607 |
申请日期 |
2010.12.02 |
申请人 |
RAMACHANDRAN RAVIKUMAR;LI YING;WISE RICHARD S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
RAMACHANDRAN RAVIKUMAR;LI YING;WISE RICHARD S. |
分类号 |
H01L29/772;H01L21/283 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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