SUBSTRATE FOR INTEGRATED CIRCUIT AND FORMING METHOD THEREOF

摘要

A substrate for an integrated circuit and a forming method thereof are provided. The method includes forming a hard mask layer on a bulk silicon material (1); etching the hard mask layer and the bulk silicon material to form first parts of trenches (4); forming a dielectric film on sidewalls of the trenches; etching the bulk silicon material further, so as to deepen the trenches and form second parts of the trenches; completely oxidizing or nitridizing the bulk silicon material parts positioned between the second parts of trenches and between the second parts of the trenches and the exterior of the bulk silicon substrate; filling the first parts and the second parts of the trenches with dielectric materials (5); and removing the hard mask layer, wherein, the first parts of the trenches is used for achieving shallow trench isolation.