| 摘要 |
PURPOSE: A programming method of a nonvolatile memory device is provided to precisely control a critical voltage distribution of a plurality of memory cells. CONSTITUTION: A first bias voltage(0V) is applied to a bit line of a first memory cell group which is programmed with a first programming level. A second bias voltage(aV) higher than the first bias voltage is applied to a bit line of a second memory cell group programmed with a second programming level. During an ISPP(Incremental Step Pulse Programming) operation section, a voltage size of a plurality of programming pulses(PGM_PULSE1 to PGM_PULSE3) gradually increase according to a programming operation. |
