| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the resistance value of gate electrodes by sufficiently ensuring the width of the gate electrodes and capable of reducing the capacitance between the gate electrodes, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: first trenches 15 that are provided on a semiconductor substrate and extend in a Y direction; second trenches 25 that are provided on the semiconductor substrate and extend in a X direction crossing to the first trenches 15; pillars 26 that are surrounded by the first and second trenches 15 and 25 and have first and second side surfaces 26a and 26b facing each other, exposed by the second trenches 25; gate electrodes 29 each provided at the bottoms of the second trenches 25 via gate insulating films 28 so as to contact the second side surfaces 26b of the pillars 26; and gaps disposed between the side surfaces of the gate electrodes 29 and the first side surfaces 26a of the pillars. <P>COPYRIGHT: (C)2012,JPO&INPIT |
