| 摘要 |
A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks, an address decoder that selects one of the memory blocks in response to an input address and generates a first control signal and a second control signal, a plurality of metal lines connected with the memory blocks and extending along a first direction, a plurality of pass transistors that connect the address decoder with a first subset of the metal lines connected with the selected memory block in response to the first control signal, and a plurality of ground transistors that supply a low voltage to a second subset of the metal lines connected with unselected memory blocks in response to the second control signal. The ground transistors have channels that extend along a second direction perpendicular to the first direction.
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