发明名称 EPITAXIAL DEPOSITION APPARATUS, GAS INJECTORS, AND CHEMICAL VAPOR MANAGEMENT SYSTEM ASSOCIATED THEREWITH
摘要 <p>An epitaxial deposition apparatus comprises a deposition chamber with at least one gas injector having a gas injection surface and a substrate support having a deposition surface; and at least one vacuum pump having a gas aperture in fluid communication with the deposition chamber and facing the gas injection surface of the at least one gas injector, the substrate support being interposed between the at least one gas injector and the gas aperture of the at least one vacuum pump. The invention also relates to an epitaxial deposition gas injector and a nozzle for an epitaxial deposition gas injector. Furthermore, the invention relates to a gas supply and handling system for an epitaxial deposition apparatus.</p>
申请公布号 CA2819189(A1) 申请公布日期 2012.06.07
申请号 CA20112819189 申请日期 2011.11.30
申请人 SOCPRA SCIENCES ET GENIE S.E.C. 发明人 ARES, RICHARD;ISNARD, LAURENT
分类号 C30B23/02;H01L21/20 主分类号 C30B23/02
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