| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition excellent in resolution as well as lithographic characteristics such as pattern features and LER (line edge roughness), and to provide a method for forming a resist pattern. <P>SOLUTION: The resist composition comprises: a base component (A) of which the solubility with respect to a developing solution varies by an effect of an acid; a nitrogen-containing organic compound component (C) containing a compound (C1) expressed by formula (c1); and an acid generator component (B) that generates an acid by exposure (excluding the compound (C1)). The acid generator component (B) is included by 10 to 60 parts by mass with respect to 100 parts by mass of the base component (A), and the compound (C1) is included by 1 to 15 mol% with respect to the sum of the compound (C1) and the acid generator component (B). In formula (c1), R<SP POS="POST">C1</SP>represents a hydroxyl group, alkoxy group, cyano group, -O-C(=O)-C(R<SP POS="POST">C2</SP>)=CH<SB POS="POST">2</SB>or -O-C(=O)-R<SP POS="POST">C3</SP>; Y<SP POS="POST">1</SP>represents a divalent aliphatic hydrocarbon group; R<SP POS="POST">1</SP>represents a hydrogen atom, fluorine atom, alkyl group or fluorinated alkyl group; p represents 1 to 10; and A<SP POS="POST">+</SP>represents an organic cation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
