| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a new method of manufacturing a semiconductor device having a MOS transistor with a thick gate insulating film and a MOS transistor with a thin gate insulating film on the same substrate. <P>SOLUTION: A method of manufacturing a semiconductor device includes the following steps of: forming a first gate insulating film on a first active region of a semiconductor substrate, and a second gate insulating film having a second film thickness thinner than that of the first gate insulating film on a second active region, with a material containing silicon oxide; patterning a polysilicon film covering the first and second gate insulating films to respectively form first and second gate electrodes on the first and second gate insulating films; anisotropically etching an insulating film covering the first and second gate electrodes so as to leave a sidewall insulating film on side faces of the first and second gate electrodes; removing the sidewall insulating film on the side face of the first gate electrode; and heat-treating in an oxidizing atmosphere the semiconductor substrate from which the sidewall insulating film on the side face of the first gate electrode is removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
