| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that prevents dielectric breakdown between a drain electrode and a gate electrode by preventing metal oozing from the gate electrode from reaching the drain electrode. <P>SOLUTION: A groove 50 is provided at an interface S between an AlGaN layer 22 located directly beneath a gate electrode 5 and an insulating film 30 located directly on the AlGaN layer 22 so as to be located between the gate electrode 5 and a drain electrode 1. Metal oozing from the gate electrode 5 to the drain electrode 1 side along the interface S can be intercepted by the groove 50. <P>COPYRIGHT: (C)2012,JPO&INPIT |
