| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a preferred field effect transistor, use thereof and manufacturing method thereof. <P>SOLUTION: A vertical field effect transistor having a semiconductor substrate (10) where a dope channel region is arranged along a depression (72), is described. Embedded connection region (18, 54) reaches to a surface of the semiconductor substrate (10). A second connection region (16) is arranged in the vicinity of an opening of a depression on the same surface. Preferably, separated depressions (70, 74, 76) are formed between the channel region and conductive wiring (54), and between the field effect transistor and an adjacent electronic part. The field effect transistor has a good electric characteristic, and is manufactured easily. <P>COPYRIGHT: (C)2012,JPO&INPIT |
