| 摘要 |
A low bump surface (401a) and a high bump surface (401b) having different heights are formed on the bottom surface of an LSI chip (40) bump electrode (401) that faces a pad for FPC wiring (73) on a glass substrate (20). When a step (d), which is the difference in height between these surfaces, is set to approximately 0.3 times or less of a diameter (L), preferably approximately 0.15 times or less of the diameter (L), of conductive particles included in a chip ACF (81), a stable conductive path is attained because the oblateness of the conductive particles trapped at either of these surfaces can be set to within a preferred range. |
