发明名称 MULTI-DIE INTEGRATED CIRCUIT STRUCTURE WITH UNDERFILL
摘要 <p>In one embodiment, a method of forming a multi-die semiconductor device is provided. A plurality of dice (402 and 404) is mounted on a semiconductor substrate (426), and neighboring ones of the dice are separated by a distance (420) at which a first one of the neighboring dice (404) will contact a meniscus (406) of a flange (416) of the neighboring die during underfill to form a capillary bridge between the neighboring dice (402 and 404). Solder bumps are reflowed to electrically connect contact terminals of the plurality of dice to contact terminals on a top surface of the substrate (512). Underfill is deposited along one or more edges of one or more of the plurality of dice (516). As a result of the capillary bridge formed between neighboring dice, flow of underfill is induced between the bottom surfaces of the neighboring dice and the top surface of the substrate. The dispensed underfill is cured (518).</p>
申请公布号 WO2012074619(A1) 申请公布日期 2012.06.07
申请号 WO2011US57138 申请日期 2011.10.20
申请人 XILINX, INC. 发明人 RAHMAN, ARIFUR
分类号 H01L21/56;H01L25/065 主分类号 H01L21/56
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