发明名称 |
METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET) AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>A method is provided for fabricating a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET, 200) on a semiconductor wafer. The method includes providing a substrate containing an epitaxial layer (201), forming a gate oxide layer (203) on a surface of the epitaxial layer (201) by a first oxidization process, forming a polysilicon gate (202) on the gate oxide layer (203) within a gate region, forming a body region (205) in the epitaxial layer (201), forming a source region (204) in the body region (205) of the epitaxial layer (201), and oxidizing the source region (204) to form oxide (207) in a gap between the polysilicon gate (202) and the source region (204) on a surface of the source region (204) by a second oxidization process.</p> |
申请公布号 |
WO2012072020(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
WO2011CN83107 |
申请日期 |
2011.11.29 |
申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD.;CSMC TECHNOLOGIES FAB2 CO., LTD.;ALIHAJY, ALIYEU |
发明人 |
ALIHAJY, ALIYEU |
分类号 |
H01L21/336;H01L21/316;H01L29/06;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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