| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a load drive circuit that can optimize an off time Toff and a fall time Tf in a simple configuration in turning off an N channel MOSFET used as a high side switch. <P>SOLUTION: A load drive circuit 10 using a power MOSFET 2 as a high side switch connected between a power supply 3 and a load 1 includes a comparison circuit 11 for comparing a gate voltage Vg of the power MOSFET with a supply voltage Vp of the power supply 3, and a shutoff circuit 12 for electrically discharging a gate terminal of the power MOSFET 2 in turning off the power MOSFET 2. The rate of discharge at which the shutoff circuit 12 electrically discharges the gate terminal of the power MOSFET 2 is set slower when the gate voltage Vg is lower than the supply voltage Vp than when the gate voltage Vg is higher than the supply voltage Vp. <P>COPYRIGHT: (C)2012,JPO&INPIT |
