SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To solve the problem in which: TFTs with a lightly-doped drain (LDD) structure and a gate-drain overlapped LDD (GOLD) structure are conventionally manufactured through a complicated process including a large number of steps.

SOLUTION: After low-concentration impurity regions 24 and 25 are formed through a second doping step, a fourth etching step is performed. Thus, the width of the low-concentration impurity region overlapping with a third electrode 18c and the width of the low-concentration impurity region not overlapping with the third electrode can be adjusted freely. The region overlapping with the third electrode 18c can relax the electric field concentration and prevent a deterioration caused by hot carriers. The region not overlapping with the third electrode 18c can suppress an off current value.

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