VARIABLE RESISTANCE MEMORY ELEMENT AND FABRICATION METHODS

摘要

An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1 x 10-9 amps, and (ii) a pair of electrodes about the amorphous carbon layer. Methods of fabricating this and other devices are also described.