| 摘要 |
A method of transferring a layer (4) from a donor substrate (1) onto a receiving substrate (10) comprises first step of ionic implantation of at least one species (31) into the donor substrate (1) forming, at a predetermined first depth (P3) in the donor substrate, a layer of concentration (3) of the species intended to form microcavities or platelets; a step of bonding the face (7) of the donor substrate (1) with a face (8) of the receiving substrate (10) by wafer bonding; and a step of splitting at high temperature to split the layer (4) in contact with the receiving substrate ( 10 ) by cleavage, at a predetermined cleavage temperature, at the layer of microcavities or platelets formed in the donor substrate (1). The method further comprises, after the first implantation step and before the splitting step, a second step of ionic implantation of silicon ions (61) into the donor substrate (1) to form a layer of concentration (6) of silicon ions (61) at a second predetermined depth (P6) in the donor substrate (1), said layer of concentration (6) of silicon ions (61) at least partially overlapping the layer of concentration (3) of the species intended to form microcavities or platelets. |
