发明名称 |
Epitaxial Structure With An Epitaxial Defect Barrier Layer And Methods Making The Same |
摘要 |
An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer. |
申请公布号 |
US2012138947(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113283309 |
申请日期 |
2011.10.27 |
申请人 |
LI HONGJIAN;AI CHANGTAO;LI JIANGBO;JIN CAIXIA;DONG ZHIJIANG;AQUALITE CO., LTD. |
发明人 |
LI HONGJIAN;AI CHANGTAO;LI JIANGBO;JIN CAIXIA;DONG ZHIJIANG |
分类号 |
H01L29/24;H01L33/60 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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