发明名称 |
Film on Graphene on a Substrate and Method and Devices Therefor |
摘要 |
A structure having a semiconductor material film formed graphene material layer that is disposed on a substrate is provided. The structure consists of a heterostructure comprising a semiconductor material film, a substrate, and a graphene material layer consisting of one or more sheets of graphene situated between the semiconductor material film and the substrate. The structure also can further include a graphene interface transition layer at the semiconductor material film interface with the graphene material layer and/or a substrate transition layer at the graphene material layer interface with the substrate.
|
申请公布号 |
US2012141799(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113310347 |
申请日期 |
2011.12.02 |
申请人 |
KUB FRANCIS;ANDERSON TRAVIS;MASTRO MICHAEL |
发明人 |
KUB FRANCIS;ANDERSON TRAVIS;MASTRO MICHAEL |
分类号 |
B32B9/00;B82Y30/00 |
主分类号 |
B32B9/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|