发明名称 Film on Graphene on a Substrate and Method and Devices Therefor
摘要 A structure having a semiconductor material film formed graphene material layer that is disposed on a substrate is provided. The structure consists of a heterostructure comprising a semiconductor material film, a substrate, and a graphene material layer consisting of one or more sheets of graphene situated between the semiconductor material film and the substrate. The structure also can further include a graphene interface transition layer at the semiconductor material film interface with the graphene material layer and/or a substrate transition layer at the graphene material layer interface with the substrate.
申请公布号 US2012141799(A1) 申请公布日期 2012.06.07
申请号 US201113310347 申请日期 2011.12.02
申请人 KUB FRANCIS;ANDERSON TRAVIS;MASTRO MICHAEL 发明人 KUB FRANCIS;ANDERSON TRAVIS;MASTRO MICHAEL
分类号 B32B9/00;B82Y30/00 主分类号 B32B9/00
代理机构 代理人
主权项
地址