发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR DISPLAY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable semiconductor device by improving the utilization efficiency of material and by simplifying the manufacturing process. <P>SOLUTION: The manufacturing method comprises the steps of forming a conductive layer on a substrate, forming a light-transmitting layer on the conductive layer, delivering a femtosecond laser onto the light-transmitting layer, and selectively removing the conductive layer and the light-transmitting layer. The conductive layer and the light-transmitting layer may be removed so that an end of the conductive layer is located inside as compared with an end of the light-transmitting layer. Before the delivery of the femtosecond laser, a surface of the light-transmitting layer may be subjected to liquid repellent treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012109582(A) |
申请公布日期 |
2012.06.07 |
申请号 |
JP20110277871 |
申请日期 |
2011.12.20 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
MORISUE MASAFUMI;TANAKA KOICHIRO |
分类号 |
H01L21/768;G02F1/1368;G02F1/167;H01L21/3205;H01L21/336;H01L29/786;H01L51/50;H05B33/06;H05B33/08;H05B33/10;H05B33/12;H05B33/14;H05B33/22 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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