发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR DISPLAY DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a highly reliable semiconductor device by improving the utilization efficiency of material and by simplifying the manufacturing process. <P>SOLUTION: The manufacturing method comprises the steps of forming a conductive layer on a substrate, forming a light-transmitting layer on the conductive layer, delivering a femtosecond laser onto the light-transmitting layer, and selectively removing the conductive layer and the light-transmitting layer. The conductive layer and the light-transmitting layer may be removed so that an end of the conductive layer is located inside as compared with an end of the light-transmitting layer. Before the delivery of the femtosecond laser, a surface of the light-transmitting layer may be subjected to liquid repellent treatment. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012109582(A) 申请公布日期 2012.06.07
申请号 JP20110277871 申请日期 2011.12.20
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 MORISUE MASAFUMI;TANAKA KOICHIRO
分类号 H01L21/768;G02F1/1368;G02F1/167;H01L21/3205;H01L21/336;H01L29/786;H01L51/50;H05B33/06;H05B33/08;H05B33/10;H05B33/12;H05B33/14;H05B33/22 主分类号 H01L21/768
代理机构 代理人
主权项
地址