| 发明名称 |
SEMICONDUCTOR MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method and a substrate processing apparatus which control concentrations of by-products and intermediates remaining in a thin film to be formed, to perform substrate processing. <P>SOLUTION: The semiconductor manufacturing method comprises: a carrying-in step of carrying a substrate into a processing chamber; a gas supply step of supplying a methyl group-containing organic silicon gas and an oxygen-containing gas to the processing chamber having the substrate carried thereinto; and a first gas excitation step following the gas supply step, in which, while the methyl group-containing organic silicon gas and the oxygen-containing gas are supplied to the processing chamber having the substrate carried thereinto, the supplied gases are irradiated with ultraviolet light to excite the gases. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012109456(A) |
申请公布日期 |
2012.06.07 |
| 申请号 |
JP20100258096 |
申请日期 |
2010.11.18 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TANABE JUNICHI;WADA YUICHI;ASHIHARA YOJI;HIYAMA MAKOTO;TAIRA HIROKI;KITAGAWA NAOKO;TAKESHIMA YUICHIRO |
| 分类号 |
H01L21/316;C23C16/44;H01L21/31 |
主分类号 |
H01L21/316 |
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