| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which has good controllability for a hole size of a connection hole. <P>SOLUTION: In a manufacturing method of a semiconductor device according to an embodiment, an upper layer insulating film is formed on a semiconductor substrate, and an amorphous film including Si is formed on the upper layer insulating film. A first resist film is formed on the amorphous film, and a first resist pattern is formed on the first resist film. The amorphous film is processed using the first resist film as a mask and the upper layer insulating film is exposed. The first resist pattern is removed, and a transition metal film is formed on the amorphous film and the exposed upper layer insulating film. A silicide film having a cubic volume larger than a cubic volume of the amorphous film is formed through thermal reaction of the amorphous film and the transition metal film. The transition metal film is removed, and the upper layer insulating film is processed using the silicide film as a mask to form a first groove in the upper layer insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
