SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS
摘要
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
申请公布号
WO2012036734(A3)
申请公布日期
2012.06.07
申请号
WO2011US01585
申请日期
2011.09.13
申请人
MICRON TECHNOLOGY, INC.;KRAMER, STEPHEN, J.;SANDHU, GURTEJ, S.