| 摘要 |
The invention provides a semiconductor laser device comprising -a semiconductor structure (10), having end surfaces (la, lb) on opposing sides along a longitudinal axis (2) being formed to have in an active region layer (12) between a top (4) and a bottom surface (5) of the structure; -a longitudinal structure (20) provided on the top surface (4) to receive an electrical current through a contact surface (22); -a first longitudinal interdigitated transducer, IDT, (35) provided on the top surface (4), said first IDT (35) extending longitudinally in a direction parallel to the longitudinal axis (2) and being arranged to generate a surface acoustic wave, SAW, in a direction parallel to the longitudinal axis (2), wherein the first IDT (35) is arranged parallel to the longitudinal structure (20) with the IDT (35), the centers of the IDT (35) and the longitudinal structure being separated by a distance along the lateral axis (3). Electrical current is supplied to the active region via a top contact (22a) and a bottom contact and to the IDT (35) via two contacts (22b, 22c). The longitudinal structure (20) may be a ridge. |
