发明名称 |
STACKED SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE STACKED SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A laminated semiconductor device and a method for manufacturing thereof are provided to improve manufacture yield by controlling reliability faulty caused by thermal history and inconsistency of coefficient of thermal expansion. CONSTITUTION: First semiconductor chip(21) comprise a first penetrating electrode(34). Second semiconductor chips(23,25,27) comprises a second penetrating electrode(33). An adhesive layer(11) is placed between the first semiconductors chip and the second semiconductor chips. An internal connection terminal(35) electrically unites the first semiconductors chip and the second semiconductor chips. The internal connection terminal comprises a conductive bump or a conductive spacer. |
申请公布号 |
KR20120057693(A) |
申请公布日期 |
2012.06.07 |
申请号 |
KR20100077827 |
申请日期 |
2010.08.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HO CHEOL |
分类号 |
H01L23/48;H01L23/12 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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