| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a supercritical drying method of a semiconductor substrate, capable of reducing particles generated on the semiconductor substrate and reducing a time required for drying processing. <P>SOLUTION: A supercritical drying method of a semiconductor substrate, comprises: rinsing using pure water the semiconductor substrate having a fine pattern formed thereon; thereafter replacing the pure water with a water-soluble organic solvent on a surface of the semiconductor substrate; then introducing the semiconductor substrate wet with the water-soluble organic solvent into a chamber; then increasing a temperature in the chamber to bring the water-soluble organic solvent to a supercritical state; then decreasing pressure in the chamber while keeping the temperature in the chamber at a temperature at which the pure water is not liquefied, to change the water-soluble organic solvent in a supercritical state into gas to discharge the gas out of the chamber, and drying the semiconductor substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
