PROJECTION EXPOSURE APPARATUS FOR EUV MICROLITHOGRAPHY AND METHOD FOR MICROLITHOGRAPHIC EXPOSURE

摘要

The invention relates to a projection exposure apparatus for EUV microlithography comprising an illumination system (1) for illuminating a pattern and a projection objective (2) for imaging the pattern onto a light-sensitive substrate (5). The projection objective (2) has a pupil plane (30) with an obscuration. The illumination system (1) generates light with an angular distribution. The angular distribution has an illumination pole (35, 36) which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole (35, 36) toward large polar angles a dark zone (41, 42) is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane (30).