发明名称 |
ALUMINUM ENHANCED PALLADIUM CMP PROCESS |
摘要 |
A process of forming an integrated circuit using a palladium CMP operation in which 25 to 125 ppm aluminum is added to the CMP slurry, allowing a palladium removal rate of at least 80 nanometers per minute at a polish pad pressure less than 9 psi and a surface speed between 1.9 and 2.2 meters per second. The palladium CMP operation may be applied to form a palladium bond pad cap after which an external bond element is formed on the palladium bond pad cap. Alternatively, the palladium CMP operation may be applied to form a palladium interconnect conductor in a first dielectric layer. |
申请公布号 |
US2012142183(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US201113308108 |
申请日期 |
2011.11.30 |
申请人 |
EISSA MONA M.;ZINN BRIAN E.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
EISSA MONA M.;ZINN BRIAN E. |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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