SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SAME

摘要

A semiconductor device capable of being produced with few steps and a production method therefor are provided. The semiconductor device comprises: a variable resistance element; a first interlayer insulating film; a second interlayer insulating film formed above the first interlayer insulating film; a first wiring with at least a part thereof formed in the first interlayer insulating layer; a barrier insulating layer interposed between the first interlayer insulating film and the second interlayer insulating film and which functions as an etching stopping layer during the processing of the second interlayer insulating film; and a conductive material with at least part thereof formed in the second interlayer insulating film. The variable resistor element has: a lower electrode that also serves as part of a first wiring; a variable resistor layer formed in the layer of barrier insulating film and electrically connected to the first wiring; and an upper electrode formed in the layer of barrier insulating film and electrically connected to the variable resistor layer and the conductive material. The upper surface of the upper electrode and the upper surface of the barrier insulating film form the same surface.