| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting diode which emits infrared light having an emission peak wavelength of 850 nm or more, especially 900 nm or more, with high output and high efficiency. <P>SOLUTION: The light-emitting diode is provided with a DBR reflective layer, and a light-emitting part sequentially on a substrate. The light-emitting part includes an active layer having a laminate structure of a well layer represented by a composition formula (In<SB POS="POST">X1</SB>Ga<SB POS="POST">1-X1</SB>)As(0≤X1≤1) and a barrier layer represented by a composition formula (Al<SB POS="POST">X2</SB>Ga<SB POS="POST">1-X2</SB>)<SB POS="POST">Y1</SB>In<SB POS="POST">1-Y1</SB>P(0≤X2≤1, 0<Y1≤1), first and second guides represented by a composition formula (Al<SB POS="POST">X3</SB>Ga<SB POS="POST">1-X3</SB>)<SB POS="POST">Y2</SB>In<SB POS="POST">1-Y2</SB>P(0≤X3≤1, 0<Y2≤1), and first and second clad layers represented by a composition formula (Al<SB POS="POST">X4</SB>Ga<SB POS="POST">1-X4</SB>)<SB POS="POST">Y</SB>In<SB POS="POST">1-Y</SB>P(0≤X4≤1, 0<Y≤1) and sandwiching the active layer with the first and second guides interposed, respectively, therebetween. <P>COPYRIGHT: (C)2012,JPO&INPIT |
