| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride light-emitting element including a light-emitting layer of a quantum well structure that has an emission peak wavelength of 410 nm or more and is provided on a semipolar plane. <P>SOLUTION: A light-emitting layer 15 is provided on a primary surface 13a of a gallium nitride-based semiconductor region 13. A quantum well structure 17 is formed so as to have an emission peak wavelength of 410 nm or more. The thickness D<SB POS="POST">W</SB>of a well layer 19a is 4 nm or more, and the thickness D<SB POS="POST">W</SB>of the well layer 19a is 10 nm or less. The well layer 19a is composed of In<SB POS="POST">X</SB>Ga<SB POS="POST">1-X</SB>N (0.15≤X<1, where X is a strain composition). The primary surface 13a of the gallium nitride-based semiconductor region 13 is inclined at an inclination angle of 15 degrees or more with reference to the ä0001} plane or the ä000-1} plane of hexagonal group-III nitride. Besides, the primary surface 13a of the gallium nitride-based semiconductor region 13 is inclined at an inclination angle α of 85 degrees or less with reference to the ä0001} plane or the ä000-1} plane. The primary surface 13a within the range is a semipolar plane. <P>COPYRIGHT: (C)2012,JPO&INPIT |
