发明名称 |
Structure and Method for Topography Free SOI Integration |
摘要 |
A semiconductor structure is provided that includes a semiconductor oxide layer having features. The semiconductor oxide layer having the features is located between an active semiconductor layer and a handle substrate. The semiconductor structure includes a planarized top surface of the active semiconductor layer such that the semiconductor oxide layer is beneath the planarized top surface. The features within the semiconductor oxide layer are mated with a surface of the active semiconductor layer.
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申请公布号 |
US2012139085(A1) |
申请公布日期 |
2012.06.07 |
申请号 |
US20100958429 |
申请日期 |
2010.12.02 |
申请人 |
TODI RAVI M.;ERVIN JOSEPH;PEI CHENGWEN;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
TODI RAVI M.;ERVIN JOSEPH;PEI CHENGWEN;WANG GENG |
分类号 |
H01L29/38;H01L21/3213 |
主分类号 |
H01L29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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